| PART |
Description |
Maker |
| ULN2005 ULN2003 ULN2003L ULN2005A ULN2005L ULN2003 |
HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS 高电压，大电流达林顿阵列
Flash Memory IC; Memory Size:64Mbit; Access Time, Tacc:90ns; Package/Case:48-TSOP; Supply Voltage Max:3V; Leaded Process Compatible:Yes; Peak Reflow
High Voltage / High Current Darlington Transistor Arrays
HIGH-VOLTAGE/ HIGH-CURRENT DARLINGTON ARRAYS
(ULN2001A - ULN2005A) High Voltage / High Current Darlington Arrays
500 mA, 50 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
List of Unclassifed Man...
Electronic Theatre Controls, Inc.
Sprague Electric
ETC[ETC]
List of Unclassifed Manufacturers
VISHAY SPRAGUE
|
| IXSH45N120B IXSH45B120B IXST45B120B |
High Voltage IGBT S Series - Improved SCSOA Capability
IGBT Discretes: Low Saturation Voltage Types
High Voltage IGBT(VCES200V，VCE(sat).0V的高电压绝缘栅双极晶体管) 75 A, 1200 V, N-CHANNEL IGBT, TO-247AD
1200V high voltage IGBT
|
IXYS Corporation
IXYS, Corp.
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| APT10026L2LL_03 APT10026L2LL APT10026L2LL03 APT100 |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
38 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET TO-264MAX, 3 PIN
|
Microsemi Corporation
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| BF1012 Q62702-F1487 Q62702-S535 Q62702-C1659 |
NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) NPN硅自动对焦和开关晶体管（高击穿电压低集电极发射极饱和电压）
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| AD5504BRUZ AD5504BRUZ-REEL EVAL-AD5504EBZ AD5501 |
High Voltage, Quad-Channel 12-Bit Voltage Output DAC
|
Analog Devices
|
| 2SK2545 |
FET Silicon N Channel Mos Type(for High speed, High Voltage Switching)
|
TOSHIBA[Toshiba Semiconductor]
|
| STW9N150 W9N150V |
N-channel 1500V - 2.2Ω - 8A - TO-247 Very high voltage PowerMESH Power MOSFET
N-channel 1500V - 2.2Ω - 8A - TO-247 Very high voltage PowerMESH?/a> Power MOSFET
N-channel 1500V - 2.2ohm - 8A - TO-247 - Very high voltage PowerMESH Power MOSFET
N-channel 1500V - 2.2ヘ - 8A - TO-247 Very high voltage PowerMESH⑩ Power MOSFET
|
ST Microelectronics, Inc.
STMICROELECTRONICS[STMicroelectronics]
|
| IRF252 IRF253 IRF250 IRF254 IRF251 IRFP251 IRFP253 |
HIGH VOLTAGE POWER MOSFET DIE N-CHANNEL ENHANCEMENT MODE HIGH RUGGEDNESS SERIES
|
IXYS[IXYS Corporation]
|
| 2SK2776 |
N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) N通道马鞍山型（高速，高压开关，斩波调压器，DC - DC变换器和电机驱动应用
N CHANNEL MOS TYPE (HIGH SPEED/ HIGH VOLTAGE SWITCHING/ CHOPPER REGULATOR/ DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| 2SK2350 |
N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) N通道马鞍山型（高速，高压开关，斩波调压器，DC - DC变换器和电机驱动应用
N CHANNEL MOS TYPE (HIGH SPEED/ HIGH VOLTAGE SWITCHING/ CHOPPER REGULATOR/ DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
